CJ3139KDW-G: Overview, Features, and Applications

The CJ3139KDW-G is an N-channel SiC (Silicon Carbide) power MOSFET manufactured by Comchip Technology. SiC MOSFETs are known for their high-temperature performance, high voltage capability, and low on-state resistance, making them ideal for power conversion applications that demand high efficiency and reliability.



The CJ3139KDW-G is a high-performance power MOSFET designed to offer superior power handling and efficiency in demanding power electronics applications. It is part of a range of SiC MOSFETs aimed at addressing the needs of modern power conversion systems.


The CJ3139KDW-G features are typically aligned with the advanced capabilities of SiC MOSFET technology, including:

  1. High Operating Temperature: SiC devices can handle higher operating temperatures compared to traditional silicon-based MOSFETs, resulting in improved thermal performance and system efficiency.

  2. Low On-Resistance: SiC MOSFETs, including the CJ3139KDW-G, generally offer low on-state resistance (RDS(on)), reducing conduction losses and improving overall efficiency.

  3. Fast Switching Speed: SiC MOSFETs have fast switching characteristics, which contribute to reduced switching losses and enable high-frequency operation in power converters.

  4. High Breakdown Voltage: SiC MOSFETs are able to handle higher voltages, making them suitable for high-voltage applications such as inverters and converters.

  5. Enhanced Thermal Performance: The device may include features for improved thermal dissipation, which is critical in high-power applications.

  6. Robustness: SiC MOSFETs often exhibit enhanced robustness, making them suitable for rugged environments and industrial applications.

  7. High-Frequency Operation: Capable of supporting high-frequency operation, making the device suitable for applications that require fast response times.


The CJ3139KDW-G is suitable for a range of high-power and high-frequency applications, including but not limited to:

  1. Power Electronics: Used in power converters, inverters, and motor drives where high efficiency and high power density are critical.

  2. Renewable Energy Systems: Suitable for use in solar inverters, wind turbine converters, and other renewable energy applications due to their high efficiency and robustness.

  3. Electric Vehicles (EVs) and Hybrid Electric Vehicles (HEVs): SiC MOSFETs are increasingly being adopted in traction inverters for electric and hybrid vehicles due to their efficiency and power density advantages.

  4. Industrial High-Power Systems: Utilized in industrial power supplies, industrial motor drives, and welding equipment due to their high voltage and high power capabilities.

  5. Grid-Tied Power Systems: Used in grid-tied inverters for efficient power conversion in utility-scale applications.

  6. Smart Grid and Energy Storage: Suitable for use in smart grid systems and energy storage applications due to their high efficiency and fast switching characteristics.

When considering the adoption of the CJ3139KDW-G, it’s essential to verify its suitability for specific application requirements and to ensure adequate consideration of driving and protection circuitry to make the most of its advanced features.

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