The IR2104PBF is an IC gate driver developed by Infineon Technologies. Here's a brief overview of this component:

Overview: The IR2104PBF is a high- and low-side gate driver IC designed specifically for driving high-power MOSFETs and IGBTs in half-bridge configurations. This means it's used to control the switching of power transistors that are commonly used in DC-DC converters, motor control, and other high-power applications.


Key Features:

  • Gate Driving Capabilities: The IC is capable of driving both high-side and low-side power switches, providing the necessary voltage and current to ensure efficient and reliable switching.
  • Bootstrap Functionality: It typically includes a bootstrap diode and capacitor arrangement, enabling efficient high-side gate driving.
  • Input Compatibility: The IC is designed to be compatible with standard CMOS or TTL input signals, making it versatile and easily integrable into various digital control systems.
  • Protection Features: It may include built-in protection features such as under-voltage lockout (UVLO) and shoot-through protection to prevent shoot-through currents in the half-bridge configuration.
  • Integrated Desaturation Detection: Some variants of this IC include desaturation detection, which is a feature that can protect the MOSFET or IGBT from overcurrent conditions.

Applications: The IR2104PBF gate driver IC is commonly used in various high-power applications, including:

  • Switched Mode Power Supplies (SMPS): Used in power supplies for efficient power conversion.
  • Motor Control: Utilized in motor drives for precise control and efficient power switching.
  • Inverters: Applied in DC-AC inverters for renewable energy systems, UPS (Uninterruptible Power Supplies), and motor drives.
  • Electronic Ballasts: Used in lighting controls, such as in fluorescent and LED ballasts.
  • Welding Equipment: Employed in the control circuits of welding machines.

In summary, the IR2104PBF gate driver IC offers a compact and efficient solution for controlling high-power MOSFETs and IGBTs in half-bridge configurations, thereby finding use in a wide range of power electronics applications.

DataSheet IR2104PBF PDF

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