IRF3710PBF IR MOSFET N-CH 100V 57A TO220AB

The IRF3710PBF is an N-Channel Power MOSFET manufactured by Infineon Technologies. Here are the key specifications for this component:

IRF3710PBF

  • Part Number: IRF3710PBF
  • Transistor Polarity: N-Channel
  • Drain-Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 57A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 28A, 10V
  • Vgs (Max): ±20V
  • Mounting Type: Through Hole
  • Package / Case: TO-220AB
  • Supplier Device Package: TO-220AB
  • Operating Temperature: -55°C ~ 175°C (TJ)

Description:

The IRF3710PBF is an N-Channel Power MOSFET designed for general-purpose power switching applications. When a positive voltage is applied to the gate relative to the source, the N-Channel MOSFET conducts.

Application:

N-Channel MOSFETs are commonly used in applications requiring high current capability, such as power supplies, motor control, high-power DC-DC converters, and other electronic systems where low on-state resistance, high current capability, and fast switching speeds are important.

Package:

The TO-220AB package is designed for through-hole mounting, offering easy and reliable mounting to printed circuit boards or heat sinks.

Features:

  • High Drain-Source Voltage: Suitable for applications requiring a higher voltage capacity.
  • Low On-State Resistance: Minimizes power dissipation and enhances power efficiency.
  • High Current Capability: Capable of handling high currents, making it suitable for high-power applications.

As with any component, it's important to carefully review the datasheet and consider your project's specific requirements to ensure this MOSFET is suitable for your application.

DataSheet IRF3710PBF PDF

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