MTB30P06VT4G: Overview,parameter,Main uses,Features,application fields,working principle and alternative models

MTB30P06VT4G MOSFET Overview:


The MTB30P06VT4G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-power applications, offering efficient switching capabilities and low on-resistance for power management.



  • Voltage Rating: Maximum voltage the MOSFET can handle.
  • Current Rating: Maximum current the MOSFET can conduct.
  • On-Resistance: Resistance across the MOSFET when it is on.
  • Gate Threshold Voltage: Voltage required to switch the MOSFET on.
  • Package Type: Physical form factor of the MOSFET.
  • DataSheet MTB30P06VT4G PDF

Main Uses:

  • Power Switching: Controls power flow in circuits efficiently.
  • Voltage Regulation: Regulates voltages in various applications.
  • Power Amplification: Amplifies power signals in audio systems.
  • Motor Control: Controls motors in robotics, industrial equipment, etc.


  • Low On-Resistance: Minimizes power losses during operation.
  • High Current Handling Capacity: Suitable for high-power applications.
  • Fast Switching Speed: Enables rapid on/off switching transitions.
  • Temperature Stability: Performs reliably across temperature ranges.
  • Enhanced Thermal Performance: Helps dissipate heat efficiently.

Application Fields:

  • Power Supplies: Used in voltage regulator circuits and switch-mode power supplies.
  • Motor Drives: Controls motors in robotics, electric vehicles, and industrial machinery.
  • Inverters: Key component in DC to AC conversion for solar inverters and UPS systems.
  • Audio Amplifiers: Utilized for power amplification in audio systems.

Working Principle:

  • Gate Control: Voltage applied to the gate terminal controls the conduction between drain and source.
  • Channel Formation: By applying a gate voltage, a conductive channel forms within the MOSFET.
  • Current Flow: When the MOSFET is on, current flows from the drain to the source.
  • Off State: With no gate voltage, the MOSFET is in a high-resistance state, minimizing current flow.

Alternative Models:

  • IRF540: A commonly used power MOSFET for similar applications.
  • STP55NF06: Alternative with comparable characteristics for power switching.
  • FDN306P: Low-power MOSFET alternative for specific applications.

The MTB30P06VT4G MOSFET provides efficient power switching and management capabilities for high-power applications. When considering alternative models like the IRF540 or STP55NF06, factors such as voltage ratings, current handling, and package types should be evaluated to ensure compatibility and performance alignment with the specific application requirements. Consult datasheets for detailed technical specifications when selecting the most suitable MOSFET for a particular application.

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